2SD2105 transistor equivalent, silicon npn darlington power transistor.
*Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 5A
*High DC Current Gain
: hFE= 1000(Min) @ IC= 5A, VCE= 3V
*Minimum Lot-to-Lot variations for robust device.
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