*Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE.

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A
*High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V
*Minimum Lot-to-Lot variations for robust device.

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