2SD2024 transistor equivalent, npn transistor.
*Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
*High DC Current Gain-
: hFE= 1000(Min)@ (VCE= 3V, IC= 2A)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for pow.
Image gallery
TAGS
Download (Size : 205.81KB)