2SD1985 transistor equivalent, npn transistor.
*Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Co.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
*Good Linearity of hFE
*Low Collector Saturation Voltage-
: VCE(sat)= 1.2V(Max,)@ IC= 3A
*Complement to Type 2SB1393
*Minimum Lot-to-Lot variations for robust device
perf.
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