2SD1890 transistor equivalent, npn transistor.
*For power amplification
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Vol.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
*High DC Current Gain
: hFE= 5000(Min) @IC= 2A
*Low Collector Saturation Voltgae-
: VCE(sat)= 2.5V(Max.)@ IC= 2A
*Complement to Type 2SB1250
*Minimum Lot-to-Lot variations.
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