2SD1609 transistor equivalent, npn transistor.
*Designed for low frequency and high-voltage amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARA.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
*Good Linearity of hFE
*100% avalanche tested
*Complement to Type 2SB1109
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLIC.
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