2SD1566 transistor equivalent, npn transistor.
*Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 10A
*Fast Switching Speed
*Minimum Lot-to-Lot variations for robust device
performance and reliable operatio.
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