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2SD1524 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) High DC Current Gain : hFE= 300(Min) @ IC= 5A, VCE= 3V Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifie

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1524 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) ·High DC Current Gain : hFE= 300(Min) @ IC= 5A, VCE= 3V ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications.
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