2SD1457 transistor equivalent, npn transistor.
*Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-.
*High DC Current Gain
: hFE= 700(Min.)@ IC= 2A, VCE= 2V
*High Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 150V(Min)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for.
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