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2SD1457 - NPN Transistor

Description

High DC Current Gain : hFE= 700(Min.)@ IC= 2A, VCE= 2V High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power amplification.

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 700(Min.)@ IC= 2A, VCE= 2V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 3 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1457 isc website：www.iscsemi.
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