2SD1446 transistor equivalent, npn transistor.
*Power amplification applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collecto.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
* Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
*High DC Current Gain
: hFE= 500(Min) @ IC= 2A, VCE= 2V
*100% avalanche tested
*Minimum Lot.
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