2SD1436 transistor equivalent, npn transistor.
*Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO .
*High DC Current Gain
: hFE= 1000(Min.)@ IC= 5A, VCE= 3V
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min)
*Complement to Type 2SB1032
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPL.
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