2SD1395 transistor equivalent, npn transistor.
*Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYM.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
*High DC Current Gain
: hFE= 1000(Min) @IC= 2.5A
*Low Saturation Voltage
*Fast Switching Speed
*Minimum Lot-to-Lot variations for robust device
performance and reliable op.
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