2SD1360 transistor equivalent, npn transistor.
*High voltage switching applications
*Igniter applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
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*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max) @IC= 4A
*High DC Current Gain
: hFE= 600(Min) @ IC= 2A, VCE= 2V
*Fast Switching Speed
*Minimum Lot-to-Lot var.
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