2SD1311 transistor equivalent, npn transistor.
*Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VA.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min)
*Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@IC= 3A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed .
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