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2SD1271 - NPN Transistor

Description

Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) Good Linearity of hFE Complement to Type 2SB946 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desi

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isc Silicon NPN Power Transistor 2SD1271 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·Complement to Type 2SB946 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
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