2SD1266 transistor equivalent, npn transistor.
*Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collecto.
*Low Collector Saturation Voltage
: VCE(sat)= 1.2V(Max)@ IC= 3A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min)
*Good Linearity of hFE
*Complement to Type 2SB941
*Minimum Lot-to-Lot variations for robust device
perform.
Image gallery
TAGS
Download (Size : 212.08KB)