2SD1255 transistor equivalent, npn transistor.
*Power amplifier applications
*Switching regulators
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V(Max.)@ IC= 3.0A
*Fast Switching Speed
*Minimum Lot-to-Lot variations for robust device performance
and reliabl.
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