2SD1230 transistor equivalent, silicon npn darlington power transistor.
*Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulator control applications.
ABSOLUT.
*High DC Current Gain
: hFE= 1500(Min.)@ IC= 4A, VCE= 3V
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.)
*Complement to Type 2SB913
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPL.
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