2SD1180 transistor equivalent, npn transistor.
*Designed for use in audio and radio frequency power amplifiers
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYM.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V (Min)
*Low collector saturation voltage
*With TO-126 package
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed f.
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