2SD1143 transistor equivalent, npn transistor.
*Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE.
*High Breakdown Voltage-
: VCBO= 1500V (Min)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 5A
*Built-in Damper Diode
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATION.
Image gallery
TAGS
Download (Size : 197.34KB)