2SD1115 transistor equivalent, npn transistor.
*Designed for high voltage switching, igniter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VA.
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min)
*High DC Current Gain
: hFE= 500(Min)@IC= 2A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high voltage swi.
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