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2SD1088 - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) High DC Current Gain- : hFE= 2000(Min.)@IC= 2A Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN Darlington Power Transistor 2SD1088 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·High DC Current Gain- : hFE= 2000(Min.)@IC= 2A ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage switching igniter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.
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