2SD1061 transistor equivalent, npn transistor.
*Designed for general high current switching as solenoid
driving, high speed inverter and converter applications.
A.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.4V(Max) @IC= 4.0A
*Complement to Type 2SB825
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robus.
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