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2SD1047E - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) Good Linearity of hFE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817E Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

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isc Silicon NPN Power Transistor isc Product Specification 2SD1047E DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB817E ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICP PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @ TC=25℃ Junction Temperature 160 V 140 V 6 V 12 A 15 A 100 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www
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