Datasheet4U Logo Datasheet4U.com

2SC5200N - NPN Transistor

Description

High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) Complement to Type 2SA1943N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC5200N NPN Transistor Toshiba
2SC5200 NPN TRANSISTOR Toshiba Semiconductor
2SC5200 NPN EPITAXIAL SILICON TRANSISTOR UTC
2SC5200 NPN Epitaxial Silicon Transistor Fairchild Semiconductor
2SC5200 150 Watt Silicon NPN Power Transistors Thinki Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC5200 NPN Transistor
2SC5200H NPN Transistor
2SC5239 NPN Transistor
2SC5242 NPN Transistor
2SC5244 Silicon NPN Power Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type 2SA1943N ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.
Published: |