| Description | ·Silicon NPN triple diffusion planar type ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high breakdown voltage high speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter... |
| Features |
IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
IC= 1.2A; VCE= 2V
fT
Current-Gain—Bandwi...
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| Datasheet |
 2SC4953 Datasheet - 179.35KB |
