Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.)
Wide Area of Safe Operation
High Speed Switching
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high speed switchi
Full PDF Text Transcription for 2SC4421 (Reference)
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4421 DESCRIPTION · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Wide Area of Safe Operation ·High...
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own Voltage- : V(BR)CBO= 500V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Ju
2SC4421 Datasheet
