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2SC3944 - NPN Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) Good Linearity of hFE Complement to Type 2SA1535 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

For low frequency driver and high power amplification.

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isc Silicon NPN Power Transistor 2SC3944 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1535 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For low frequency driver and high power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.5 A 15 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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