Datasheet Details
| Part number | 2SC3856 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.45 KB |
| Description | NPN Transistor |
| Download | 2SC3856 Download (PDF) |
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| Part number | 2SC3856 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.45 KB |
| Description | NPN Transistor |
| Download | 2SC3856 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1492 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3856 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3856 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage CONDITIONS IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;
IB= 0.5A ICBO Collector Cutoff Current VCB= 200V ;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3856 | Silicon NPN Transistor | Sanken electric |
 |
2SC3856 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SC3856-P | Silicon NPN Transistor | Inchange Semiconductor |
| Part Number | Description |
|---|---|
| 2SC3850 | NPN Transistor |
| 2SC3851 | NPN Transistor |
| 2SC3851A | NPN Transistor |
| 2SC3852 | NPN Transistor |
| 2SC3853 | NPN Transistor |
| 2SC3854 | NPN Transistor |
| 2SC3855 | NPN Transistor |
| 2SC3857 | NPN Transistor |
| 2SC3858 | NPN Transistor |
| 2SC3821 | NPN Transistor |