Datasheet4U Logo Datasheet4U.com

2SC3832 - NPN Transistor

Description

Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V (Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator an

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3832 Silicon NPN Transistor Sanken electric
2SC3832 SILICON POWER TRANSISTOR SavantIC
2SC383 NPN Transistor Toshiba Semiconductor
2SC3830 Silicon NPN Transistor Sanken electric
2SC3830 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC3830 NPN Transistor
2SC3831 NPN Transistor
2SC3833 NPN Transistor
2SC3834 NPN Transistor
2SC3835 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
Published: |