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2SC3588-Z - NPN Transistor

Description

Low Collector Saturation Voltage- VCE(sat)= 0.5V(Max)@ IC= 300mA High Collector-Emitter Breakdown Voltage- V(BR)CEO= 400V(Min) Complement to Type 2SA1400-Z Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high Volt

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isc Silicon NPN Power Transistor 2SC3588-Z DESCRIPTION ·Low Collector Saturation Voltage- VCE(sat)= 0.5V(Max)@ IC= 300mA ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 400V(Min) ·Complement to Type 2SA1400-Z ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high Voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.5 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
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