| Description | ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min) ·Complement to Type 2SA1306B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 2SC3298B 200 V VCE... |
| Features |
Breakdown Voltage
2SC3298B IC= 10mA; IB= 0
200
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 500mA; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE
DC Current Gain
IC= 100mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= ...
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| Datasheet |
 2SC3298B Datasheet - 210.61KB |
