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2SC3168 - NPN Transistor

Description

Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage

Performance and reliable operation.

Switching regulator Motor controls Deflections circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistor isc Product Specification 2SC3168 DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS ·Switching regulator ·Motor controls ·Deflections circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 200 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.
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