Datasheet4U Logo Datasheet4U.com

2SC2837 - NPN Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO=150V(Min) Good Linearity of hFE Complement to Type 2SA1186 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIM

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC2837 Silicon NPN Transistor Sanken electric
2SC2837 SILICON POWER TRANSISTOR SavantIC
2SC2830 SILICON POWER TRANSISTOR SavantIC
2SC2831 SILICON POWER TRANSISTOR SavantIC
2SC2831A SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC2830 NPN Transistor
2SC2831 NPN Transistor
2SC2832 NPN Transistor
2SC2833 NPN Transistor
2SC2834 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=150V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1186 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2837 isc website：www.iscsemi.
Published: |