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2SC2688 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 50mA, IB= 5mA Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in Color TV chroma output ci

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 50mA, IB= 5mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in Color TV chroma output circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2688 isc website： www.iscsemi.
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