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2SC2682 - NPN Transistor

Description

High voltage Low Saturation Voltage Complementary to 2SA1142 PNP transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC2682 is designed for use in audio frequency power amplifier ABSOLUT

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2682 DESCRIPTION ·High voltage ·Low Saturation Voltage ·Complementary to 2SA1142 PNP transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SC2682 is designed for use in audio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCER Collector-Emitter Voltage RBE=150Ω 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 0.1 A 10 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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