2SC2582 transistor equivalent, npn transistor.
*Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VC.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 35V(Min)
*Good Linearity of hFE
*High Collector Power Dissipation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for AF.
Image gallery
TAGS
Download (Size : 192.15KB)