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isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-speed switching, and is ideal for use
as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
Pc
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
2.
2SC2517 Datasheet
