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2SC2331 Datasheet Preview

2SC2331 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
2SC2331
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.6V(Max.)@ IC= 1A
·Fast Switching Speed
·Complement to Type 2SA1008
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency power
amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current-Continuous
2.0
A
ICM
Collector Current-Peak
4.0
A
IB
Base Current-Continuous
1.0
A
Collector Power Dissipation@ Ta=25
1.5
PC
W
Collector Power Dissipation@ TC=25
15
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SC2331 Datasheet Preview

2SC2331 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
2SC2331
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
0.6
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
1.5
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
10 μA
ICER
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 100V ; RBE= 51Ω,Ta=125
VCE= 100V;VBE(off)= -1.5V
VCE= 100V;VBE(off)= -1.5V,Ta=125
VEB= 5.0V; IC= 0
1.0 mA
10 μA
1.0 mA
10 μA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
40
hFE-2
DC Current Gain
IC= 1.0A; VCE= 5V
40
200
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
100
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
35
pF
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 1.0A ,RL= 50Ω,
IB1= -IB2= 0.1A, VCC50V
0.5 μs
1.5 μs
0.5 μs
hFE-2 Classifications
M
L
K
40-80 60-120 100-200
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SC2331
Description NPN Transistor
Maker INCHANGE
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