isc Silicon NPN Power Transistor
2SC2331
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.6V(Max.)@ IC= 1A
·Fast Switching Speed
·Complement to Type 2SA1008
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency power
amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current-Continuous
2.0
A
ICM
Collector Current-Peak
4.0
A
IB
Base Current-Continuous
1.0
A
Collector Power Dissipation@ Ta=25℃
1.5
PC
W
Collector Power Dissipation@ TC=25℃
15
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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