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2SC2229 - NPN Transistor

Description

High breakdown voltage Low output capacitance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching applications Driver stage audio amplifier applications Black and white TV vid

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isc Silicon NPN Pow Transistor INCHANGE Semiconductor 2SC2229 DESCRIPTION ·High breakdown voltage ·Low output capacitance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching applications ·Driver stage audio amplifier applications ·Black and white TV video output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -50 mA 0.8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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