2SC2209 transistor equivalent, npn transistor.
*Designed for low frequency power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAMETER
VALUE
UNIT
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*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min)
*High Collector Power Dissipation
*Complement to Type 2SA963
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for.
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