2SC1953 transistor equivalent, npn transistor.
*Designed for low-frequency power pre-amplification,which is optimum for the pre-driver stage of a 60 W to 100 W out.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
*Good Linearity of hFE
*Complement to Type 2SA914
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for low.
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