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2SC1953 - NPN Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) Good Linearity of hFE Complement to Type 2SA914 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power pre-amplification,which is optimu

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Complement to Type 2SA914 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power pre-amplification,which is optimum for the pre-driver stage of a 60 W to 100 W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA ICP Collector Current-Peak PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 100 mA 1.
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