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2SC1625 - NPN Transistor

Description

Silicon NPN planar type Complementary to 2SA815 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications AB

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1625 DESCRIPTION ·Silicon NPN planar type ·Complementary to 2SA815 ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A IE Emitter Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 1.5 W 15 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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