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2SC1516 INCHANGE NPN Transistor

Description ·High Collector Current IC= 1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCE...
Features tor-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 1.0A; IB= 0.1A ICBO Collector Cutoff Current VCB= 35V; IE= 0 hFE DC...

Datasheet PDF File 2SC1516 Datasheet - 183.22KB

2SC1516  






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