Description | ·High Collector Current IC= 1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCE... |
Features |
tor-Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A; IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.0A; IB= 0.1A
ICBO
Collector Cutoff Current
VCB= 35V; IE= 0
hFE
DC...
|
Datasheet | 2SC1516 Datasheet - 183.22KB |