2SC1212 transistor equivalent, npn transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*High Collector Current IC= 1A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
*Good Linearity of hFE
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for low fr.
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