2SB896 transistor equivalent, pnp transistor.
*Designed for low voltage switching applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
.
*Collector-Emitter BreakdownVoltage-
: V(BR)CEO= -40V(Min.)
*Low Collector Saturation Voltage-
: VCE(sat)= -0.6(Max.) @IC= -7A
*High speed switching
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performan.
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