2SB817E transistor equivalent, pnp transistor.
*Designed for audio frequency amplifier output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMET.
*
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
*Good Linearity of hFE
*High Current Capability
*Wide Area of Safe Operation
*Complement to Type 2SD1047E
*Minimum Lot-to-Lot variations for robust device
perfo.
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