| Description | ··Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1047E ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VC... |
| Features |
MBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE=∞
-140
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA; IE= 0
-160
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
-6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A
-2.5 V
VBE(on) Base -Emitt...
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| Datasheet |
 2SB817E Datasheet - 191.21KB |
