2SB813 transistor equivalent, pnp transistor.
*Designed for AF power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCB.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
*Good Linearity of hFE
*High Power Dissipation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for AF power am.
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