2SB755 transistor equivalent, pnp transistor.
*Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V(Min)
*Good Linearity of hFE
*Complement to Type 2SD845
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for power amp.
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