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2SB707 - PNP Transistor

Description

High Collector Current: IC= -7A Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A Complement to Type 2SD568 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low-speed

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A ·Complement to Type 2SD568 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -7 A IB Base Current-Continuous Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature -3.5 A 40 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB707 isc website：www.iscsemi.
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